APT20M38SVRG/TR
vs
APT20M38BVRG
feature comparison
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
MICROCHIP TECHNOLOGY INC
|
MICROCHIP TECHNOLOGY INC
|
| Package Description |
D3PAK-3/2
|
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Samacsys Manufacturer |
Microchip
|
|
| Avalanche Energy Rating (Eas) |
1300 mJ
|
1300 mJ
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
200 V
|
200 V
|
| Drain Current-Max (ID) |
67 A
|
67 A
|
| Drain-source On Resistance-Max |
0.038 Ω
|
0.038 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| Feedback Cap-Max (Crss) |
585 pF
|
|
| JESD-30 Code |
R-PSSO-G2
|
R-PSFM-T3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-55 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
FLANGE MOUNT
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
370 W
|
|
| Pulsed Drain Current-Max (IDM) |
268 A
|
268 A
|
| Surface Mount |
YES
|
NO
|
| Terminal Form |
GULL WING
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Turn-off Time-Max (toff) |
95 ns
|
|
| Turn-on Time-Max (ton) |
70 ns
|
|
| Base Number Matches |
1
|
1
|
| Rohs Code |
|
Yes
|
| Factory Lead Time |
|
43 Weeks, 6 Days
|
| Additional Feature |
|
HIGH VOLTAGE
|
| JEDEC-95 Code |
|
TO-247
|
| JESD-609 Code |
|
e1
|
| Moisture Sensitivity Level |
|
1
|
| Qualification Status |
|
Not Qualified
|
| Terminal Finish |
|
TIN SILVER COPPER
|
|
|
|
Compare APT20M38SVRG/TR with alternatives
Compare APT20M38BVRG with alternatives