APT29F100B2
vs
IXFK30N100Q2
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Active
|
Obsolete
|
Ihs Manufacturer |
MICROCHIP TECHNOLOGY INC
|
LITTELFUSE INC
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Factory Lead Time |
49 Weeks
|
|
Additional Feature |
AVALANCHE RATED, HIGH RELIABILITY
|
AVALANCHE RATED
|
Avalanche Energy Rating (Eas) |
1875 mJ
|
4000 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
1000 V
|
1000 V
|
Drain Current-Max (ID) |
30 A
|
30 A
|
Drain-source On Resistance-Max |
0.44 Ω
|
0.4 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PSIP-T3
|
R-PSFM-T3
|
JESD-609 Code |
e1
|
e1
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
IN-LINE
|
FLANGE MOUNT
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
120 A
|
120 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
TIN SILVER COPPER
|
Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Package Description |
|
FLANGE MOUNT, R-PSFM-T3
|
JEDEC-95 Code |
|
TO-264AA
|
Peak Reflow Temperature (Cel) |
|
260
|
Power Dissipation-Max (Abs) |
|
735 W
|
Time@Peak Reflow Temperature-Max (s) |
|
10
|
|
|
|
Compare APT29F100B2 with alternatives
Compare IXFK30N100Q2 with alternatives