APT38N60BC6
vs
FCH47N60F
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
MICROCHIP TECHNOLOGY INC
|
ON SEMICONDUCTOR
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Factory Lead Time |
43 Weeks
|
|
| Additional Feature |
AVALANCHE RATED, ULTRA-LOW RESISTANCE
|
|
| Avalanche Energy Rating (Eas) |
796 mJ
|
1800 mJ
|
| Case Connection |
DRAIN
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE
|
| DS Breakdown Voltage-Min |
600 V
|
600 V
|
| Drain Current-Max (ID) |
38 A
|
47 A
|
| Drain-source On Resistance-Max |
0.099 Ω
|
0.073 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-247
|
TO-247
|
| JESD-30 Code |
R-PSFM-T3
|
R-PSFM-T3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
112 A
|
141 A
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
2
|
3
|
| Date Of Intro |
|
2019-12-04
|
| Feedback Cap-Max (Crss) |
|
250 pF
|
| Operating Temperature-Max |
|
150 °C
|
| Operating Temperature-Min |
|
-55 °C
|
| Power Dissipation-Max (Abs) |
|
417 W
|
| Transistor Application |
|
SWITCHING
|
| Turn-off Time-Max (toff) |
|
1260 ns
|
| Turn-on Time-Max (ton) |
|
880 ns
|
|
|
|
Compare APT38N60BC6 with alternatives
Compare FCH47N60F with alternatives