APT38N60SC6
vs
NTHL082N65S3F
feature comparison
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
MICROCHIP TECHNOLOGY INC
|
ONSEMI
|
Reach Compliance Code |
compliant
|
not_compliant
|
Base Number Matches |
2
|
1
|
Pbfree Code |
|
Yes
|
Manufacturer Package Code |
|
340CH
|
ECCN Code |
|
EAR99
|
Factory Lead Time |
|
22 Weeks
|
Date Of Intro |
|
2017-10-10
|
Samacsys Manufacturer |
|
onsemi
|
Avalanche Energy Rating (Eas) |
|
510 mJ
|
Configuration |
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
|
650 V
|
Drain Current-Max (ID) |
|
40 A
|
Drain-source On Resistance-Max |
|
0.082 Ω
|
FET Technology |
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
|
TO-247
|
JESD-30 Code |
|
R-PSFM-T3
|
JESD-609 Code |
|
e3
|
Number of Elements |
|
1
|
Number of Terminals |
|
3
|
Operating Mode |
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
|
150 °C
|
Operating Temperature-Min |
|
-55 °C
|
Package Body Material |
|
PLASTIC/EPOXY
|
Package Shape |
|
RECTANGULAR
|
Package Style |
|
FLANGE MOUNT
|
Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
Polarity/Channel Type |
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
|
313 W
|
Pulsed Drain Current-Max (IDM) |
|
100 A
|
Surface Mount |
|
NO
|
Terminal Finish |
|
Matte Tin (Sn) - annealed
|
Terminal Form |
|
THROUGH-HOLE
|
Terminal Position |
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
Transistor Application |
|
SWITCHING
|
Transistor Element Material |
|
SILICON
|
|
|
|
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