APT38N60SC6
vs
TK39J60W5
feature comparison
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
MICROCHIP TECHNOLOGY INC
|
TOSHIBA CORP
|
Reach Compliance Code |
compliant
|
unknown
|
Base Number Matches |
2
|
1
|
Rohs Code |
|
No
|
Package Description |
|
FLANGE MOUNT, R-PSFM-T3
|
ECCN Code |
|
EAR99
|
Samacsys Manufacturer |
|
Toshiba
|
Avalanche Energy Rating (Eas) |
|
608 mJ
|
Case Connection |
|
DRAIN
|
Configuration |
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
|
600 V
|
Drain Current-Max (ID) |
|
38.8 A
|
Drain-source On Resistance-Max |
|
0.074 Ω
|
FET Technology |
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
|
R-PSFM-T3
|
Number of Elements |
|
1
|
Number of Terminals |
|
3
|
Operating Mode |
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
|
150 °C
|
Package Body Material |
|
PLASTIC/EPOXY
|
Package Shape |
|
RECTANGULAR
|
Package Style |
|
FLANGE MOUNT
|
Polarity/Channel Type |
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
|
270 W
|
Pulsed Drain Current-Max (IDM) |
|
155 A
|
Surface Mount |
|
NO
|
Terminal Form |
|
THROUGH-HOLE
|
Terminal Position |
|
SINGLE
|
Transistor Application |
|
SWITCHING
|
Transistor Element Material |
|
SILICON
|
|
|
|
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