APT5010JLLU2 vs APT5010JVRU3 feature comparison

APT5010JLLU2 Advanced Power Technology

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APT5010JVRU3 Advanced Power Technology

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Rohs Code Yes Yes
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer ADVANCED POWER TECHNOLOGY INC ADVANCED POWER TECHNOLOGY INC
Package Description ISOTOP-4 ISOTOP-4
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 1600 mJ 2500 mJ
Case Connection ISOLATED ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V 500 V
Drain Current-Max (ID) 41 A 44 A
Drain-source On Resistance-Max 0.1 Ω 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PUFM-X4 R-PUFM-X4
Number of Elements 1 1
Number of Terminals 4 4
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 164 A 176 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Form UNSPECIFIED UNSPECIFIED
Terminal Position UPPER UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 3 3
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 450 W
Reference Standard UL RECOGNIZED