APT8020B2LLG vs APT56M50B2 feature comparison

APT8020B2LLG Microchip Technology Inc

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APT56M50B2 Microchip Technology Inc

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC MICROCHIP TECHNOLOGY INC
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Factory Lead Time 26 Weeks 26 Weeks
Avalanche Energy Rating (Eas) 3000 mJ 1200 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 800 V 500 V
Drain Current-Max (ID) 38 A 56 A
Drain-source On Resistance-Max 0.2 Ω 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSIP-T3 R-PSIP-T3
JESD-609 Code e1 e3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 152 A 175 A
Surface Mount NO NO
Terminal Finish TIN SILVER COPPER Matte Tin (Sn)
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 2
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Operating Temperature-Max 150 °C
Qualification Status Not Qualified

Compare APT8020B2LLG with alternatives

Compare APT56M50B2 with alternatives