APTM50DDAM65T3
vs
APTM50DSKM65T3G
feature comparison
| Pbfree Code |
No
|
Yes
|
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
MICROSEMI CORP
|
MICROSEMI CORP
|
| Part Package Code |
MODULE
|
|
| Package Description |
MODULE-25
|
ROHS COMPLIANT, SP3, 25 PIN
|
| Pin Count |
25
|
25
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
AVALANCHE RATED
|
AVALANCHE RATED
|
| Avalanche Energy Rating (Eas) |
3000 mJ
|
3000 mJ
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
|
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
|
| DS Breakdown Voltage-Min |
500 V
|
500 V
|
| Drain Current-Max (ID) |
51 A
|
51 A
|
| Drain-source On Resistance-Max |
0.065 Ω
|
0.078 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-XUFM-X25
|
R-XUFM-X25
|
| JESD-609 Code |
e0
|
e1
|
| Number of Elements |
2
|
2
|
| Number of Terminals |
25
|
25
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
UNSPECIFIED
|
UNSPECIFIED
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
390 W
|
|
| Pulsed Drain Current-Max (IDM) |
204 A
|
204 A
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
TIN LEAD
|
TIN SILVER COPPER
|
| Terminal Form |
UNSPECIFIED
|
UNSPECIFIED
|
| Terminal Position |
UPPER
|
UPPER
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
2
|
1
|
| Moisture Sensitivity Level |
|
1
|
|
|
|
Compare APTM50DDAM65T3 with alternatives
Compare APTM50DSKM65T3G with alternatives