AUIRF6218STRL vs AUIRF6218S feature comparison

AUIRF6218STRL Infineon Technologies AG

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AUIRF6218S Infineon Technologies AG

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Package Description D2PAK-3/2 D2PAK-3/2
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon Infineon
Additional Feature AVALANCHE RATED AVALANCHE RATED
Avalanche Energy Rating (Eas) 210 mJ 210 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 150 V 150 V
Drain Current-Max (ID) 27 A 27 A
Drain-source On Resistance-Max 0.15 Ω 0.15 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB TO-263AB
JESD-30 Code R-PSSO-G2 R-PSSO-G2
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity/Channel Type P-CHANNEL P-CHANNEL
Power Dissipation-Max (Abs) 250 W 250 W
Pulsed Drain Current-Max (IDM) 110 A 110 A
Reference Standard AEC-Q101 AEC-Q101
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 3

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Compare AUIRF6218S with alternatives