AUIRF7734M2TR
vs
AUIRF7734M2TR1
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
INTERNATIONAL RECTIFIER CORP
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Samacsys Manufacturer |
Infineon
|
|
Avalanche Energy Rating (Eas) |
56 mJ
|
|
Case Connection |
DRAIN
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE
|
DS Breakdown Voltage-Min |
40 V
|
|
Drain Current-Max (ID) |
17 A
|
72 A
|
Drain-source On Resistance-Max |
0.0049 Ω
|
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-XBCC-N3
|
|
Moisture Sensitivity Level |
1
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
175 °C
|
175 °C
|
Package Body Material |
UNSPECIFIED
|
|
Package Shape |
RECTANGULAR
|
|
Package Style |
CHIP CARRIER
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
46 W
|
46 W
|
Pulsed Drain Current-Max (IDM) |
288 A
|
|
Reference Standard |
AEC-Q101
|
|
Surface Mount |
YES
|
YES
|
Terminal Form |
NO LEAD
|
|
Terminal Position |
BOTTOM
|
|
Transistor Application |
SWITCHING
|
|
Transistor Element Material |
SILICON
|
|
Base Number Matches |
1
|
1
|
|
|
|