AUIRF7799L2TR
vs
IRF7799L2TR1PBF
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
INTERNATIONAL RECTIFIER CORP
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Factory Lead Time |
12 Weeks
|
|
| Samacsys Manufacturer |
Infineon
|
|
| Avalanche Energy Rating (Eas) |
325 mJ
|
325 mJ
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
250 V
|
250 V
|
| Drain Current-Max (ID) |
6.6 A
|
6.6 A
|
| Drain-source On Resistance-Max |
0.038 Ω
|
0.038 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-XBCC-N9
|
R-XBCC-N9
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
9
|
9
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
175 °C
|
175 °C
|
| Package Body Material |
UNSPECIFIED
|
UNSPECIFIED
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
CHIP CARRIER
|
CHIP CARRIER
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
125 W
|
125 W
|
| Pulsed Drain Current-Max (IDM) |
140 A
|
140 A
|
| Reference Standard |
AEC-Q101
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
NO LEAD
|
NO LEAD
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Pbfree Code |
|
Yes
|
| Package Description |
|
HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-9
|
| Pin Count |
|
9
|
| JESD-609 Code |
|
e1
|
| Qualification Status |
|
Not Qualified
|
| Terminal Finish |
|
TIN SILVER COPPER
|
|
|
|
Compare AUIRF7799L2TR with alternatives
Compare IRF7799L2TR1PBF with alternatives