BAS29,215 vs BAS29T/R feature comparison

BAS29,215 NXP Semiconductors

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BAS29T/R Nexperia

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Rohs Code Yes Yes
Part Life Cycle Code Transferred Active
Ihs Manufacturer NXP SEMICONDUCTORS NEXPERIA
Part Package Code TO-236
Package Description PLASTIC PACKAGE-3 R-PDSO-G3
Pin Count 3
Manufacturer Package Code SOT23
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.25 V
JEDEC-95 Code TO-236AB TO-236AB
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Pk Forward Current-Max 3 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Output Current-Max 0.25 A 0.25 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Power Dissipation-Max 0.25 W 0.25 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 110 V 110 V
Reverse Current-Max 0.1 µA
Reverse Recovery Time-Max 0.05 µs 0.05 µs
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 30
Base Number Matches 1 1
Date Of Intro 2017-02-01

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