BAS29,215
vs
BAS29T/R
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
NXP SEMICONDUCTORS
NEXPERIA
Part Package Code
TO-236
Package Description
PLASTIC PACKAGE-3
R-PDSO-G3
Pin Count
3
Manufacturer Package Code
SOT23
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.70
8541.10.00.70
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1.25 V
JEDEC-95 Code
TO-236AB
TO-236AB
JESD-30 Code
R-PDSO-G3
R-PDSO-G3
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Non-rep Pk Forward Current-Max
3 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
3
3
Operating Temperature-Max
150 °C
150 °C
Output Current-Max
0.25 A
0.25 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
260
Power Dissipation-Max
0.25 W
0.25 W
Qualification Status
Not Qualified
Rep Pk Reverse Voltage-Max
110 V
110 V
Reverse Current-Max
0.1 µA
Reverse Recovery Time-Max
0.05 µs
0.05 µs
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN
TIN
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
30
Base Number Matches
2
3
Date Of Intro
2017-02-01
Application
GENERAL PURPOSE
Compare BAS29,215 with alternatives
Compare BAS29T/R with alternatives