BAS29212
vs
BAS29S62Z
feature comparison
| Source Content uid |
BAS29212
|
BAS29S62Z
|
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
NATIONAL SEMICONDUCTOR CORP
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SINGLE
|
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G3
|
| Number of Elements |
1
|
|
| Number of Phases |
1
|
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Power Dissipation-Max |
0.25 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Rep Pk Reverse Voltage-Max |
110 V
|
90 V
|
| Reverse Recovery Time-Max |
0.05 µs
|
0.05 µs
|
| Surface Mount |
YES
|
YES
|
| Technology |
AVALANCHE
|
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Base Number Matches |
1
|
2
|
| Package Description |
|
R-PDSO-G3
|
| JEDEC-95 Code |
|
TO-236AB
|
|
|
|
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