BAS29235 vs BAS29212 feature comparison

BAS29235 NXP Semiconductors

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BAS29212 NXP Semiconductors

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Part Life Cycle Code Active Active
Ihs Manufacturer NXP SEMICONDUCTORS NXP SEMICONDUCTORS
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Power Dissipation-Max 0.25 W 0.25 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 110 V 110 V
Reverse Recovery Time-Max 0.05 µs 0.05 µs
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 1 1

Compare BAS29235 with alternatives

Compare BAS29212 with alternatives