BAS29235
vs
BAS29,215
feature comparison
|
BAS29235
NXP Semiconductors
Buy Now
Datasheet
|
Buy Now
Datasheet
|
| Source Content uid |
BAS29235
|
BAS29,215
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
NEXPERIA
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G3
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Power Dissipation-Max |
0.25 W
|
0.25 W
|
| Qualification Status |
Not Qualified
|
|
| Rep Pk Reverse Voltage-Max |
110 V
|
110 V
|
| Reverse Recovery Time-Max |
0.05 µs
|
0.05 µs
|
| Surface Mount |
YES
|
YES
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Base Number Matches |
1
|
2
|
| Part Package Code |
|
TO-236
|
| Pin Count |
|
3
|
| Manufacturer Package Code |
|
SOT23
|
| HTS Code |
|
8541.10.00.70
|
| Date Of Intro |
|
1991-04-01
|
| JEDEC-95 Code |
|
TO-236AB
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Output Current-Max |
|
0.25 A
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Reference Standard |
|
IEC-60134
|
| Terminal Finish |
|
TIN
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
Compare BAS29235 with alternatives
Compare BAS29,215 with alternatives