BAS29235
vs
BAS29,215
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Transferred
Ihs Manufacturer
NXP SEMICONDUCTORS
NXP SEMICONDUCTORS
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
Application
GENERAL PURPOSE
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
JESD-30 Code
R-PDSO-G3
R-PDSO-G3
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
3
3
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Power Dissipation-Max
0.25 W
0.25 W
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
110 V
110 V
Reverse Recovery Time-Max
0.05 µs
0.05 µs
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Base Number Matches
1
2
Rohs Code
Part Package Code
TO-236
Package Description
PLASTIC PACKAGE-3
Pin Count
3
Manufacturer Package Code
SOT23
HTS Code
8541.10.00.70
Forward Voltage-Max (VF)
1.25 V
JEDEC-95 Code
TO-236AB
JESD-609 Code
e3
Moisture Sensitivity Level
1
Non-rep Pk Forward Current-Max
3 A
Output Current-Max
0.25 A
Peak Reflow Temperature (Cel)
260
Reverse Current-Max
0.1 µA
Terminal Finish
TIN
Time@Peak Reflow Temperature-Max (s)
30
Compare BAS29235 with alternatives
Compare BAS29,215 with alternatives