BAS29235 vs MMBD4448H-7 feature comparison

BAS29235 NXP Semiconductors

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MMBD4448H-7 Diodes Incorporated

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Source Content uid BAS29235
Part Life Cycle Code Active Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS DIODES INC
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Power Dissipation-Max 0.25 W 0.35 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 110 V 80 V
Reverse Recovery Time-Max 0.05 µs 0.004 µs
Surface Mount YES YES
Technology AVALANCHE
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 1 1
Rohs Code No
Package Description R-PDSO-G3
Pin Count 3
HTS Code 8541.10.00.70
Breakdown Voltage-Min 80 V
Forward Voltage-Max (VF) 1.25 V
JESD-609 Code e0
Non-rep Pk Forward Current-Max 4 A
Operating Temperature-Min -65 °C
Output Current-Max 0.25 A
Reverse Current-Max 0.1 µA
Reverse Test Voltage 70 V
Terminal Finish TIN LEAD

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