BAS29TRL13 vs BAS29T/R feature comparison

BAS29TRL13 YAGEO Corporation

Buy Now Datasheet

BAS29T/R NXP Semiconductors

Buy Now Datasheet
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer PHILIPS COMPONENTS NXP SEMICONDUCTORS
Package Description R-PDSO-G3 PLASTIC PACKAGE-3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Application GENERAL PURPOSE
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.9 V 1.25 V
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 3 3
Output Current-Max 0.25 A 0.25 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Qualification Status Not Qualified Not Qualified
Reverse Recovery Time-Max 0.05 µs 0.05 µs
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 1 3
Rohs Code Yes
Part Package Code SOT-23
Pin Count 3
JEDEC-95 Code TO-236AB
JESD-609 Code e3
Non-rep Pk Forward Current-Max 3 A
Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 0.25 W
Rep Pk Reverse Voltage-Max 110 V
Reverse Current-Max 0.1 µA
Technology AVALANCHE
Terminal Finish Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s) 40

Compare BAS29TRL13 with alternatives

Compare BAS29T/R with alternatives