BAV16W vs BAV10136 feature comparison

BAV16W Formosa Microsemi Co Ltd

Buy Now Datasheet

BAV10136 NXP Semiconductors

Buy Now Datasheet
Part Life Cycle Code Active Obsolete
Ihs Manufacturer FORMOSA MICROSEMI CO LTD NXP SEMICONDUCTORS
Package Description PLASTIC PACKAGE-2 O-LALF-W2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Application GENERAL PURPOSE GENERAL PURPOSE
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 Code R-PDSO-G2 O-LALF-W2
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 200 °C
Operating Temperature-Min -55 °C
Output Current-Max 0.15 A 0.3 A
Package Body Material PLASTIC/EPOXY GLASS
Package Shape RECTANGULAR ROUND
Package Style SMALL OUTLINE LONG FORM
Power Dissipation-Max 0.4 W 0.35 W
Rep Pk Reverse Voltage-Max 100 V 60 V
Reverse Recovery Time-Max 0.004 µs 0.006 µs
Surface Mount YES NO
Terminal Form GULL WING WIRE
Terminal Position DUAL AXIAL
Base Number Matches 4 1
Case Connection ISOLATED
Forward Voltage-Max (VF) 1.25 V
JEDEC-95 Code DO-35
Non-rep Pk Forward Current-Max 9 A
Qualification Status Not Qualified
Reverse Current-Max 0.1 µA

Compare BAV16W with alternatives

Compare BAV10136 with alternatives