BAV16W vs BAV19W-GT1 feature comparison

BAV16W Formosa Microsemi Co Ltd

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BAV19W-GT1 Sangdest Microelectronics (Nanjing) Co Ltd

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Part Life Cycle Code Active Obsolete
Ihs Manufacturer FORMOSA MICROSEMI CO LTD SANGDEST MICROELECTRONICS (NANJING) CO LTD
Package Description PLASTIC PACKAGE-2 R-PDSO-G2
Reach Compliance Code compliant unknown
ECCN Code EAR99
HTS Code 8541.10.00.70
Application GENERAL PURPOSE GENERAL PURPOSE
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 Code R-PDSO-G2 R-PDSO-G2
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Output Current-Max 0.15 A 0.2 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Power Dissipation-Max 0.4 W 0.41 W
Rep Pk Reverse Voltage-Max 100 V 100 V
Reverse Recovery Time-Max 0.004 µs 0.05 µs
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 4 1
Rohs Code Yes
Moisture Sensitivity Level 1
Qualification Status Not Qualified

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Compare BAV19W-GT1 with alternatives