BAV99_R2_10001 vs 1SS181TE85R feature comparison

BAV99_R2_10001 PanJit Semiconductor

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1SS181TE85R Toshiba America Electronic Components

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Rohs Code Yes
Part Life Cycle Code Active Active
Ihs Manufacturer PAN JIT INTERNATIONAL INC TOSHIBA CORP
Package Description R-PDSO-G3 SC-59, TO-236MOD, 3 PIN
Pin Count 3
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.715 V 1.2 V
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3
Non-rep Pk Forward Current-Max 4 A 2 A
Number of Elements 2 2
Number of Phases 1 1
Number of Terminals 3 3
Operating Temperature-Min -55 °C
Output Current-Max 0.15 A 0.1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Power Dissipation-Max 0.25 W 0.225 W
Rep Pk Reverse Voltage-Max 100 V 85 V
Reverse Recovery Time-Max 0.004 µs 0.004 µs
Surface Mount YES YES
Terminal Finish TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 1 3
Application FAST RECOVERY
Operating Temperature-Max 125 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Reference Standard AEC-Q101
Reverse Current-Max 0.5 µA
Reverse Test Voltage 80 V
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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