BB804Y235 vs MA4ST406CK-T feature comparison

BB804Y235 NXP Semiconductors

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MA4ST406CK-T MACOM

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS M/A-COM TECHNOLOGY SOLUTIONS INC
Package Description R-PDSO-G3 R-PDSO-G3
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Breakdown Voltage-Min 18 V 22 V
Configuration COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode Capacitance Ratio-Min 1.65 8
Diode Capacitance-Nom 42.75 pF 27 pF
Diode Element Material SILICON SILICON
Diode Type VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE
Frequency Band VERY HIGH FREQUENCY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Number of Elements 2 2
Number of Terminals 3 3
Operating Temperature-Max 125 °C 125 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Power Dissipation-Max 0.25 W 0.25 W
Qualification Status Not Qualified Not Qualified
Reverse Current-Max 0.02 µA
Reverse Test Voltage 16 V
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Variable Capacitance Diode Classification ABRUPT HYPERABRUPT
Base Number Matches 1 2
Pin Count 3
Manufacturer Package Code CASE 287
Diode Cap Tolerance 10%
Quality Factor-Min 150
Rep Pk Reverse Voltage-Max 22 V

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