BC847AS_R2_00001
vs
BC847BDW1T1
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Contact Manufacturer
|
| Ihs Manufacturer |
PAN JIT INTERNATIONAL INC
|
LESHAN RADIO CO LTD
|
| Package Description |
SMALL OUTLINE, R-PDSO-G6
|
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Collector Current-Max (IC) |
0.1 A
|
0.1 A
|
| Collector-Base Capacitance-Max |
4.5 pF
|
|
| Collector-Emitter Voltage-Max |
45 V
|
|
| Configuration |
SEPARATE, 2 ELEMENTS
|
SINGLE
|
| DC Current Gain-Min (hFE) |
110
|
200
|
| JESD-30 Code |
R-PDSO-G6
|
|
| Number of Elements |
2
|
1
|
| Number of Terminals |
6
|
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-55 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
|
| Terminal Position |
DUAL
|
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Transistor Application |
AMPLIFIER
|
|
| Transistor Element Material |
SILICON
|
|
| Transition Frequency-Nom (fT) |
100 MHz
|
100 MHz
|
| VCEsat-Max |
0.3 V
|
|
| Base Number Matches |
1
|
3
|
| Power Dissipation-Max (Abs) |
|
0.38 W
|
|
|
|
Compare BC847AS_R2_00001 with alternatives
Compare BC847BDW1T1 with alternatives