BC847BW-G
vs
BC847BWF2
feature comparison
| Part Life Cycle Code |
Contact Manufacturer
|
Active
|
| Ihs Manufacturer |
WEITRON TECHNOLOGY CO LTD
|
YANGZHOU YANGJIE ELECTRONICS CO LTD
|
| Package Description |
,
|
SMALL OUTLINE, R-PDSO-G3
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Base Number Matches |
2
|
1
|
| Rohs Code |
|
Yes
|
| HTS Code |
|
8541.21.00.95
|
| Collector Current-Max (IC) |
|
0.1 A
|
| Collector-Base Capacitance-Max |
|
4.5 pF
|
| Collector-Emitter Voltage-Max |
|
45 V
|
| Configuration |
|
SINGLE
|
| DC Current Gain-Min (hFE) |
|
200
|
| JESD-30 Code |
|
R-PDSO-G3
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Number of Elements |
|
1
|
| Number of Terminals |
|
3
|
| Operating Temperature-Max |
|
150 °C
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
SMALL OUTLINE
|
| Polarity/Channel Type |
|
NPN
|
| Power Dissipation Ambient-Max |
|
0.2 W
|
| Power Dissipation-Max (Abs) |
|
0.2 W
|
| Surface Mount |
|
YES
|
| Terminal Finish |
|
TIN
|
| Terminal Form |
|
GULL WING
|
| Terminal Position |
|
DUAL
|
| Transistor Element Material |
|
SILICON
|
| Transition Frequency-Nom (fT) |
|
100 MHz
|
| VCEsat-Max |
|
0.5 V
|
|
|
|
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