BC848C vs BC847AWR feature comparison

BC848C Diodes Incorporated

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BC847AWR Central Semiconductor Corp

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Rohs Code No No
Part Life Cycle Code Obsolete Active
Ihs Manufacturer DIODES INC CENTRAL SEMICONDUCTOR CORP
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 30 V 45 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 420 110
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type NPN NPN
Power Dissipation-Max (Abs) 0.3 W 0.25 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish TIN LEAD Tin/Lead (Sn/Pb)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 300 MHz
Base Number Matches 41 1
Pbfree Code No
Package Description PLASTIC, SUPERMINI-3
Pin Count 3
HTS Code 8541.21.00.95
Collector-Base Capacitance-Max 4.5 pF
Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Dissipation Ambient-Max 0.25 W
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
VCEsat-Max 0.6 V

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