BC849BW,135 vs BC849-B feature comparison

BC849BW,135 NXP Semiconductors

Buy Now Datasheet

BC849-B Samsung Semiconductor

Buy Now Datasheet
Rohs Code Yes
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS SAMSUNG SEMICONDUCTOR INC
Part Package Code SC-70 SOT-23
Package Description SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Pin Count 3 3
Manufacturer Package Code SOT323
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.21.00.95
Additional Feature LOW NOISE LOW NOISE
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Base Capacitance-Max 3 pF
Collector-Emitter Voltage-Max 30 V 30 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 200 200
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN NPN
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application AMPLIFIER SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 100 MHz 300 MHz
VCEsat-Max 0.6 V
Base Number Matches 2 4

Compare BC849BW,135 with alternatives

Compare BC849-B with alternatives