BC849CW-TAPE-13 vs BC847C-13-F feature comparison

BC849CW-TAPE-13 NXP Semiconductors

Buy Now Datasheet

BC847C-13-F Diodes Incorporated

Buy Now Datasheet
Part Life Cycle Code Obsolete Active
Ihs Manufacturer NXP SEMICONDUCTORS DIODES INC
Package Description SMALL OUTLINE, R-PDSO-G3 GREEN, PLASTIC PACKAGE-3
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Additional Feature LOW NOISE HIGH RELIABILITY
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Base Capacitance-Max 3 pF 3 pF
Collector-Emitter Voltage-Max 30 V 45 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 420 420
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type NPN NPN
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application AMPLIFIER SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 300 MHz 300 MHz
VCEsat-Max 0.6 V 0.6 V
Base Number Matches 1 1
Pbfree Code Yes
Rohs Code Yes
Factory Lead Time 8 Weeks
Samacsys Manufacturer Diodes Incorporated
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Temperature-Min -65 °C
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max (Abs) 0.35 W
Reference Standard AEC-Q101
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 30

Compare BC849CW-TAPE-13 with alternatives

Compare BC847C-13-F with alternatives