BC850B vs TBC849 feature comparison

BC850B Diotec Semiconductor AG

Buy Now Datasheet

TBC849 Toshiba America Electronic Components

Buy Now Datasheet
Rohs Code Yes
Part Life Cycle Code Active Active
Ihs Manufacturer DIOTEC SEMICONDUCTOR AG TOSHIBA CORP
Part Package Code SOT-23
Package Description ROHS COMPLIANT, PLASTIC PACKAGE-3 SMALL OUTLINE, R-PDSO-G3
Pin Count 3 3
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Samacsys Manufacturer Diotec
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Base Capacitance-Max 6 pF
Collector-Emitter Voltage-Max 45 V 45 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 200 200
JEDEC-95 Code TO-236
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3 e0
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 125 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN NPN
Power Dissipation-Max (Abs) 0.25 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN TIN LEAD
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING AMPLIFIER
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 300 MHz 300 MHz
VCEsat-Max 0.6 V
Base Number Matches 3 3
Additional Feature LOW NOISE

Compare BC850B with alternatives

Compare TBC849 with alternatives