BC856BE6327 vs 2N6067 feature comparison

BC856BE6327 Infineon Technologies AG

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2N6067 Crimson Semiconductor Inc

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Rohs Code Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG CRIMSON SEMICONDUCTOR INC
Package Description SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Additional Feature TR, 7 INCH: 3000
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Base Capacitance-Max 1.5 pF 16 pF
Collector-Emitter Voltage-Max 65 V 40 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 220 50
JESD-30 Code R-PDSO-G3 O-PBCY-W3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR ROUND
Package Style SMALL OUTLINE CYLINDRICAL
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type PNP PNP
Power Dissipation-Max (Abs) 0.33 W 0.625 W
Qualification Status Not Qualified Not Qualified
Reference Standard AEC-Q101
Surface Mount YES NO
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING WIRE
Terminal Position DUAL BOTTOM
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application AMPLIFIER
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 250 MHz 150 MHz
VCEsat-Max 0.65 V
Base Number Matches 2 1
JEDEC-95 Code TO-92

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