BC857BWT1
vs
BC857BWT/R
feature comparison
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
MOTOROLA INC
|
PHILIPS SEMICONDUCTORS
|
| Package Description |
SMALL OUTLINE, R-PDSO-G3
|
,
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.21.00.95
|
|
| Collector Current-Max (IC) |
0.1 A
|
0.1 A
|
| Collector-Base Capacitance-Max |
4.5 pF
|
|
| Collector-Emitter Voltage-Max |
45 V
|
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
220
|
220
|
| JESD-30 Code |
R-PDSO-G3
|
|
| JESD-609 Code |
e0
|
e3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Polarity/Channel Type |
PNP
|
PNP
|
| Power Dissipation Ambient-Max |
0.15 W
|
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
MATTE TIN
|
| Terminal Form |
GULL WING
|
|
| Terminal Position |
DUAL
|
|
| Transistor Application |
AMPLIFIER
|
|
| Transistor Element Material |
SILICON
|
|
| Transition Frequency-Nom (fT) |
100 MHz
|
100 MHz
|
| VCEsat-Max |
0.65 V
|
|
| Base Number Matches |
6
|
3
|
| Rohs Code |
|
Yes
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Power Dissipation-Max (Abs) |
|
0.2 W
|
|
|
|
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