BC858C vs BC858-C feature comparison

BC858C TDK Micronas GmbH

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BC858-C Rochester Electronics LLC

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Rohs Code No Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer ITT SEMICONDUCTOR ROCHESTER ELECTRONICS LLC
Reach Compliance Code unknown unknown
ECCN Code EAR99
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Base Capacitance-Max 6 pF
Collector-Emitter Voltage-Max 30 V 30 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 420 420
JEDEC-95 Code TO-236
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type PNP PNP
Power Dissipation-Max (Abs) 0.3 W
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Finish TIN LEAD NOT SPECIFIED
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 150 MHz 250 MHz
VCEsat-Max 0.65 V
Base Number Matches 2 6
Pbfree Code Yes
Package Description ROHS COMPLIANT PACKAGE-3
Pin Count 3
Additional Feature LOW NOISE
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER

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