BCM857BV,315
vs
NSVT45010MW6T3G
feature comparison
Rohs Code |
Yes
|
|
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
NEXPERIA
|
ONSEMI
|
Part Package Code |
SOT
|
SC-88/SC70-6/SOT-363 6 LEAD
|
Pin Count |
6
|
6
|
Manufacturer Package Code |
SOT666
|
419B-02
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Samacsys Manufacturer |
Nexperia
|
onsemi
|
Collector Current-Max (IC) |
0.1 A
|
0.1 A
|
Collector-Emitter Voltage-Max |
45 V
|
45 V
|
Configuration |
SEPARATE, 2 ELEMENTS
|
SEPARATE, 2 ELEMENTS
|
DC Current Gain-Min (hFE) |
200
|
220
|
JESD-30 Code |
R-PDSO-F6
|
R-PDSO-G6
|
JESD-609 Code |
e3
|
e3
|
Moisture Sensitivity Level |
1
|
1
|
Number of Elements |
2
|
2
|
Number of Terminals |
6
|
6
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
260
|
260
|
Polarity/Channel Type |
PNP
|
PNP
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
TIN
|
MATTE TIN
|
Terminal Form |
FLAT
|
GULL WING
|
Terminal Position |
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
30
|
30
|
Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
Transistor Element Material |
SILICON
|
SILICON
|
Transition Frequency-Nom (fT) |
175 MHz
|
100 MHz
|
Base Number Matches |
1
|
1
|
Pbfree Code |
|
Yes
|
Package Description |
|
SC-88, SOT-363, 6 PIN
|
Factory Lead Time |
|
2 Days
|
Collector-Base Capacitance-Max |
|
4.5 pF
|
Operating Temperature-Max |
|
150 °C
|
Operating Temperature-Min |
|
-55 °C
|
Power Dissipation-Max (Abs) |
|
0.38 W
|
VCEsat-Max |
|
0.65 V
|
|
|
|
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