BCP48E6327
vs
BCV48,115
feature comparison
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
SIEMENS A G
|
NXP SEMICONDUCTORS
|
| Package Description |
SMALL OUTLINE, R-PDSO-G4
|
PLASTIC, SC-62, 3 PIN
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.75
|
8541.29.00.75
|
| Case Connection |
COLLECTOR
|
COLLECTOR
|
| Collector Current-Max (IC) |
0.5 A
|
0.5 A
|
| Collector-Emitter Voltage-Max |
60 V
|
60 V
|
| Configuration |
DARLINGTON
|
DARLINGTON
|
| DC Current Gain-Min (hFE) |
2000
|
2000
|
| JESD-30 Code |
R-PDSO-G4
|
R-PSSO-F3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
4
|
3
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity/Channel Type |
PNP
|
PNP
|
| Power Dissipation Ambient-Max |
1.5 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
FLAT
|
| Terminal Position |
DUAL
|
SINGLE
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
200 MHz
|
220 MHz
|
| VCEsat-Max |
1 V
|
1 V
|
| Base Number Matches |
1
|
1
|
| Rohs Code |
|
Yes
|
| Part Package Code |
|
SOT-89
|
| Pin Count |
|
3
|
| Manufacturer Package Code |
|
SOT89
|
| JEDEC-95 Code |
|
TO-243AA
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Power Dissipation-Max (Abs) |
|
1 W
|
| Terminal Finish |
|
TIN
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
| Transistor Application |
|
AMPLIFIER
|
|
|
|
Compare BCP48E6327 with alternatives
Compare BCV48,115 with alternatives