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BCR148S vs PUMH20,115 feature comparison

BCR148S Siemens

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PUMH20,115 NXP Semiconductors

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Part Life Cycle Code Transferred Transferred
Ihs Manufacturer SIEMENS A G NXP SEMICONDUCTORS
Package Description SMALL OUTLINE, R-PDSO-G6 PLASTIC, SMD, SC-88, 6 PIN
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.21.00.95
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT IN BIAS RESISTOR RATIO 1
Collector Current-Max (IC) 0.07 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 70 30
JESD-30 Code R-PDSO-G6 R-PDSO-G6
Number of Elements 2 2
Number of Terminals 6 6
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type NPN NPN
Power Dissipation Ambient-Max 0.25 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 100 MHz
VCEsat-Max 0.3 V
Base Number Matches 2 2
Rohs Code Yes
Part Package Code TSSOP
Pin Count 6
Manufacturer Package Code SOT363
JESD-609 Code e3
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max (Abs) 0.2 W
Terminal Finish TIN
Time@Peak Reflow Temperature-Max (s) 30
Transistors » Small Signal Bipolar Transistors
Transistors » Small Signal Bipolar Transistors

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Compare PUMH20,115 with alternatives