BCR183S
vs
BCW60FN
feature comparison
Part Life Cycle Code |
Transferred
|
Transferred
|
Ihs Manufacturer |
SIEMENS A G
|
SIEMENS A G
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.21.00.75
|
8541.21.00.75
|
Additional Feature |
BUILT-IN BIAS RESISTOR RATIO IS 1
|
LOW NOISE
|
Collector Current-Max (IC) |
0.1 A
|
0.1 A
|
Collector-Emitter Voltage-Max |
50 V
|
32 V
|
Configuration |
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
|
SINGLE
|
DC Current Gain-Min (hFE) |
30
|
100
|
JESD-30 Code |
R-PDSO-G6
|
R-PDSO-G3
|
Number of Elements |
2
|
1
|
Number of Terminals |
6
|
3
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Polarity/Channel Type |
PNP
|
NPN
|
Power Dissipation Ambient-Max |
0.25 W
|
0.33 W
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
DUAL
|
DUAL
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Transition Frequency-Nom (fT) |
200 MHz
|
250 MHz
|
VCEsat-Max |
0.3 V
|
0.55 V
|
Base Number Matches |
2
|
3
|
Rohs Code |
|
No
|
Package Description |
|
SMALL OUTLINE, R-PDSO-G3
|
JEDEC-95 Code |
|
TO-236
|
JESD-609 Code |
|
e0
|
Power Dissipation-Max (Abs) |
|
0.31 W
|
Terminal Finish |
|
Tin/Lead (Sn/Pb)
|
|
|
|
Compare BCR183S with alternatives
Compare BCW60FN with alternatives