BCV62-T
vs
BCV62
feature comparison
| Part Life Cycle Code |
Transferred
|
Active
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
|
| Package Description |
SMALL OUTLINE, R-PDSO-G4
|
SOT-143, 4 PIN
|
| Pin Count |
4
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Case Connection |
COLLECTOR
|
|
| Collector Current-Max (IC) |
0.1 A
|
0.1 A
|
| Collector-Emitter Voltage-Max |
30 V
|
30 V
|
| Configuration |
CURRENT MIRROR
|
COMMON BASE, 2 ELEMENTS
|
| DC Current Gain-Min (hFE) |
100
|
100
|
| JESD-30 Code |
R-PDSO-G4
|
R-PDSO-G4
|
| Number of Elements |
1
|
2
|
| Number of Terminals |
4
|
4
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity/Channel Type |
PNP
|
PNP
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
100 MHz
|
100 MHz
|
| VCEsat-Max |
0.65 V
|
0.65 V
|
| Base Number Matches |
2
|
4
|
| Collector-Base Capacitance-Max |
|
4.5 pF
|
| Operating Temperature-Min |
|
-65 °C
|
| Power Dissipation-Max (Abs) |
|
0.25 W
|
|
|
|
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