BCW60ATR
vs
BCW60AT/R
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
SAMSUNG SEMICONDUCTOR INC
|
NXP SEMICONDUCTORS
|
| Part Package Code |
SOT-23
|
|
| Package Description |
SMALL OUTLINE, R-PDSO-G3
|
|
| Pin Count |
3
|
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Collector Current-Max (IC) |
0.1 A
|
0.1 A
|
| Collector-Emitter Voltage-Max |
32 V
|
32 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
120
|
50
|
| JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
125 MHz
|
100 MHz
|
| Base Number Matches |
2
|
2
|
| Additional Feature |
|
LOW NOISE
|
| Operating Temperature-Max |
|
150 °C
|
| Power Dissipation-Max (Abs) |
|
0.3 W
|
| Transistor Application |
|
SWITCHING
|
| Turn-off Time-Max (toff) |
|
800 ns
|
| Turn-on Time-Max (ton) |
|
150 ns
|
| VCEsat-Max |
|
0.55 V
|
|
|
|
Compare BCW60ATR with alternatives
Compare BCW60AT/R with alternatives