BCW60C,235 vs BCW60CTR feature comparison

BCW60C,235 NXP Semiconductors

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BCW60CTR Samsung Semiconductor

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Rohs Code Yes
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS SAMSUNG SEMICONDUCTOR INC
Part Package Code TO-236 SOT-23
Pin Count 3 3
Manufacturer Package Code SOT23
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.21.00.75
Additional Feature LOW NOISE
Collector Current-Max (IC) 0.2 A 0.1 A
Collector-Emitter Voltage-Max 32 V 32 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 90 250
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN NPN
Power Dissipation-Max (Abs) 0.3 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 250 MHz 125 MHz
Turn-off Time-Max (toff) 800 ns
Turn-on Time-Max (ton) 150 ns
VCEsat-Max 0.55 V
Base Number Matches 2 2
Package Description SMALL OUTLINE, R-PDSO-G3

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