BCW65ATRLEADFREE
vs
2N5581E3
feature comparison
| Pbfree Code |
Yes
|
|
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
CENTRAL SEMICONDUCTOR CORP
|
MICROSEMI CORP
|
| Package Description |
SMALL OUTLINE, R-PDSO-G3
|
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Collector-Base Capacitance-Max |
6 pF
|
|
| Collector-Emitter Voltage-Max |
32 V
|
40 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
100
|
40
|
| JESD-30 Code |
R-PDSO-G3
|
O-MBCY-W3
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Package Body Material |
PLASTIC/EPOXY
|
METAL
|
| Package Shape |
RECTANGULAR
|
ROUND
|
| Package Style |
SMALL OUTLINE
|
CYLINDRICAL
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
YES
|
NO
|
| Terminal Finish |
MATTE TIN
|
|
| Terminal Form |
GULL WING
|
WIRE
|
| Terminal Position |
DUAL
|
BOTTOM
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
170 MHz
|
250 MHz
|
| VCEsat-Max |
0.7 V
|
|
| Base Number Matches |
1
|
1
|
| Collector Current-Max (IC) |
|
0.8 A
|
| JEDEC-95 Code |
|
TO-46
|
|
|
|
Compare BCW65ATRLEADFREE with alternatives
Compare 2N5581E3 with alternatives