BCW70T116 vs PDTA113ZS feature comparison

BCW70T116 ROHM Semiconductor

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PDTA113ZS Nexperia

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer ROHM CO LTD NEXPERIA
Package Description SMALL OUTLINE, R-PDSO-G3 CYLINDRICAL, O-PBCY-T3
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer ROHM Semiconductor
Additional Feature LOW NOISE BUILT-IN BIAS RESISTOR RATIO IS 10
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Base Capacitance-Max 7 pF
Collector-Emitter Voltage-Max 45 V 50 V
Configuration SINGLE SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 210 35
JESD-30 Code R-PDSO-G3 O-PBCY-T3
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR ROUND
Package Style SMALL OUTLINE CYLINDRICAL
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity/Channel Type PNP PNP
Qualification Status Not Qualified
Surface Mount YES NO
Terminal Form GULL WING THROUGH-HOLE
Terminal Position DUAL BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Application AMPLIFIER SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 250 MHz
VCEsat-Max 0.3 V
Base Number Matches 1 1
Date Of Intro 2017-02-01
JEDEC-95 Code TO-92

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