BFR90 vs 2SC5010-T1 feature comparison

BFR90 Microsemi Corporation

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2SC5010-T1 Renesas Electronics Corporation

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Pbfree Code No No
Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICROSEMI CORP RENESAS ELECTRONICS CORP
Package Description DISK BUTTON, O-PRDB-F3 ULTRA SUPER MINIMOLD PACKAGE-3
Pin Count 3 3
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
Samacsys Manufacturer Microsemi Corporation
Additional Feature LOW NOISE LOW NOISE
Case Connection COLLECTOR
Collector Current-Max (IC) 0.03 A 0.03 A
Collector-Base Capacitance-Max 1 pF 0.7 pF
Collector-Emitter Voltage-Max 15 V 6 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 25 75
Highest Frequency Band ULTRA HIGH FREQUENCY BAND L BAND
JESD-30 Code O-PRDB-F3 R-PDSO-G3
JESD-609 Code e0
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND RECTANGULAR
Package Style DISK BUTTON SMALL OUTLINE
Polarity/Channel Type NPN NPN
Power Dissipation Ambient-Max 0.18 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish TIN LEAD
Terminal Form FLAT GULL WING
Terminal Position RADIAL DUAL
Transistor Application SWITCHING AMPLIFIER
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 5000 MHz 12000 MHz
Base Number Matches 1 3
Moisture Sensitivity Level 1
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 0.125 W

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