BLV57
vs
VHB10-12F
feature comparison
Part Life Cycle Code |
Obsolete
|
Active
|
Ihs Manufacturer |
NXP SEMICONDUCTORS
|
ASI SEMICONDUCTOR INC
|
Part Package Code |
SOT
|
|
Package Description |
FLANGE MOUNT, R-CDFM-F8
|
FLANGE MOUNT, O-CRFM-F4
|
Pin Count |
8
|
4
|
Manufacturer Package Code |
SOT161A
|
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.29.00.75
|
|
Additional Feature |
HIGH RELIABILITY, DIFFUSED EMITTER BALLASTING RESISTORS
|
|
Case Connection |
ISOLATED
|
EMITTER
|
Collector Current-Max (IC) |
2 A
|
2 A
|
Collector-Base Capacitance-Max |
30 pF
|
45 pF
|
Collector-Emitter Voltage-Max |
27 V
|
18 V
|
Configuration |
COMMON EMITTER, 2 ELEMENTS
|
SINGLE
|
DC Current Gain-Min (hFE) |
15
|
5
|
Highest Frequency Band |
ULTRA HIGH FREQUENCY BAND
|
VERY HIGH FREQUENCY BAND
|
JESD-30 Code |
R-CDFM-F8
|
O-CRFM-F4
|
Number of Elements |
2
|
1
|
Number of Terminals |
8
|
4
|
Operating Temperature-Max |
200 °C
|
200 °C
|
Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
CERAMIC, METAL-SEALED COFIRED
|
Package Shape |
RECTANGULAR
|
ROUND
|
Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
Polarity/Channel Type |
NPN
|
NPN
|
Power Dissipation Ambient-Max |
77 W
|
|
Power Dissipation-Max (Abs) |
77 W
|
20 W
|
Power Gain-Min (Gp) |
8 dB
|
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
NO
|
Terminal Form |
FLAT
|
FLAT
|
Terminal Position |
DUAL
|
RADIAL
|
Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
Transistor Element Material |
SILICON
|
SILICON
|
Transition Frequency-Nom (fT) |
2500 MHz
|
|
Base Number Matches |
2
|
1
|
|
|
|
Compare BLV57 with alternatives
Compare VHB10-12F with alternatives