BSB053N03LPG
vs
NTTFS4985NFTWG
feature comparison
Rohs Code |
Yes
|
|
Part Life Cycle Code |
Obsolete
|
|
Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
|
Package Description |
GREEN, METAL, WDSON-2, 3 PIN
|
|
Pin Count |
3
|
|
Reach Compliance Code |
compliant
|
|
ECCN Code |
EAR99
|
|
Additional Feature |
AVALANCHE RATED
|
|
Avalanche Energy Rating (Eas) |
75 mJ
|
|
Case Connection |
DRAIN
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min |
30 V
|
|
Drain Current-Max (ID) |
17 A
|
|
Drain-source On Resistance-Max |
0.0053 Ω
|
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
|
JESD-30 Code |
R-MBCC-N3
|
|
JESD-609 Code |
e3
|
|
Moisture Sensitivity Level |
3
|
|
Number of Elements |
1
|
|
Number of Terminals |
3
|
|
Operating Mode |
ENHANCEMENT MODE
|
|
Operating Temperature-Max |
150 °C
|
|
Package Body Material |
METAL
|
|
Package Shape |
RECTANGULAR
|
|
Package Style |
CHIP CARRIER
|
|
Peak Reflow Temperature (Cel) |
260
|
|
Polarity/Channel Type |
N-CHANNEL
|
|
Power Dissipation-Max (Abs) |
42 W
|
|
Pulsed Drain Current-Max (IDM) |
284 A
|
|
Qualification Status |
Not Qualified
|
|
Surface Mount |
YES
|
|
Terminal Finish |
MATTE TIN
|
|
Terminal Form |
NO LEAD
|
|
Terminal Position |
BOTTOM
|
|
Transistor Application |
SWITCHING
|
|
Transistor Element Material |
SILICON
|
|
Base Number Matches |
1
|
|
|
|
|
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