BSC010N04LS vs BSB014N04LX3GXUMA1 feature comparison

BSC010N04LS Infineon Technologies AG

Buy Now Datasheet

BSB014N04LX3GXUMA1 Infineon Technologies AG

Buy Now Datasheet
Pbfree Code No Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Package Description GREEN, PLASTIC, TDSON-8 WDSON-2
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon Infineon
Avalanche Energy Rating (Eas) 330 mJ 260 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V 40 V
Drain Current-Max (ID) 38 A 180 A
Drain-source On Resistance-Max 0.0013 Ω 0.0014 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F8 R-MBCC-N3
JESD-609 Code e3 e4
Moisture Sensitivity Level 1 3
Number of Elements 1 1
Number of Terminals 8 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY METAL
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE CHIP CARRIER
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 400 A 400 A
Surface Mount YES YES
Terminal Finish Tin (Sn) SILVER NICKEL
Terminal Form FLAT NO LEAD
Terminal Position DUAL BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 10 1
Pin Count 3
Operating Temperature-Max 150 °C
Operating Temperature-Min -40 °C
Power Dissipation-Max (Abs) 89 W
Qualification Status Not Qualified

Compare BSC010N04LS with alternatives

Compare BSB014N04LX3GXUMA1 with alternatives