BSC016N03LSGATMA1 vs RS1E350BNTB feature comparison

BSC016N03LSGATMA1 Infineon Technologies AG

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RS1E350BNTB ROHM Semiconductor

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Pbfree Code No
Rohs Code Yes Yes
Part Life Cycle Code End Of Life Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG ROHM CO LTD
Package Description SMALL OUTLINE, R-PDSO-F8 HSOP-8
Pin Count 8
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Factory Lead Time 22 Weeks 21 Weeks
Samacsys Manufacturer Infineon ROHM Semiconductor
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 290 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 30 V
Drain Current-Max (ID) 32 A 35 A
Drain-source On Resistance-Max 0.0023 Ω 0.0025 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F8 R-PDSO-F5
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 8 5
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 400 A 140 A
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Finish Tin (Sn) TIN
Terminal Form FLAT FLAT
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 10
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 2