BSC047N08NS3 G vs CSD19502Q5B feature comparison

BSC047N08NS3G Infineon Technologies AG

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CSD19502Q5B Texas Instruments

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Pbfree Code Yes Yes
Rohs Code Yes No
Part Life Cycle Code Active Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG TEXAS INSTRUMENTS INC
Package Description TDSON-8 VSON-8
Pin Count 8
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon Texas Instruments
Avalanche Energy Rating (Eas) 310 mJ 274 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V 80 V
Drain Current-Max (ID) 100 A 157 A
Drain-source On Resistance-Max 0.0047 Ω 0.0048 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-N8 R-PDSO-N8
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 8 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 125 W 195 W
Pulsed Drain Current-Max (IDM) 400 A 400 A
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Finish Tin (Sn) MATTE TIN
Terminal Form NO LEAD NO LEAD
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 2
HTS Code 8541.29.00.95
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Feedback Cap-Max (Crss) 22 pF

Compare BSC047N08NS3 G with alternatives

Compare CSD19502Q5B with alternatives