BSC093N04LSG
vs
SIR426DP-T1-GE3
feature comparison
Pbfree Code |
Yes
|
|
Rohs Code |
Yes
|
|
Part Life Cycle Code |
Active
|
|
Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
|
Part Package Code |
SON
|
|
Package Description |
TDSON-8
|
|
Pin Count |
8
|
|
Reach Compliance Code |
not_compliant
|
|
ECCN Code |
EAR99
|
|
HTS Code |
8541.29.00.95
|
|
Samacsys Manufacturer |
Infineon
|
|
Additional Feature |
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
|
|
Avalanche Energy Rating (Eas) |
10 mJ
|
|
Case Connection |
DRAIN
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min |
40 V
|
|
Drain Current-Max (ID) |
13 A
|
|
Drain-source On Resistance-Max |
0.0093 Ω
|
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
|
JESD-30 Code |
R-PDSO-F8
|
|
JESD-609 Code |
e3
|
|
Moisture Sensitivity Level |
1
|
|
Number of Elements |
1
|
|
Number of Terminals |
8
|
|
Operating Mode |
ENHANCEMENT MODE
|
|
Operating Temperature-Max |
150 °C
|
|
Operating Temperature-Min |
-55 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
|
Package Shape |
RECTANGULAR
|
|
Package Style |
SMALL OUTLINE
|
|
Peak Reflow Temperature (Cel) |
260
|
|
Polarity/Channel Type |
N-CHANNEL
|
|
Power Dissipation Ambient-Max |
2.5 W
|
|
Power Dissipation-Max (Abs) |
35 W
|
|
Pulsed Drain Current-Max (IDM) |
196 A
|
|
Qualification Status |
Not Qualified
|
|
Surface Mount |
YES
|
|
Terminal Finish |
Tin (Sn)
|
|
Terminal Form |
FLAT
|
|
Terminal Position |
DUAL
|
|
Time@Peak Reflow Temperature-Max (s) |
40
|
|
Transistor Application |
SWITCHING
|
|
Transistor Element Material |
SILICON
|
|
Base Number Matches |
2
|
|
|
|
|
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