BSC360N15NS3G
vs
SIR804DP-T1-GE3
feature comparison
Pbfree Code |
Yes
|
|
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
VISHAY INTERTECHNOLOGY INC
|
Package Description |
TDSON-8
|
HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8
|
Pin Count |
8
|
|
Reach Compliance Code |
not_compliant
|
not_compliant
|
ECCN Code |
EAR99
|
EAR99
|
Samacsys Manufacturer |
Infineon
|
Vishay
|
Avalanche Energy Rating (Eas) |
80 mJ
|
61 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
150 V
|
100 V
|
Drain Current-Max (ID) |
33 A
|
60 A
|
Drain-source On Resistance-Max |
0.036 Ω
|
0.0078 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PDSO-N8
|
R-PDSO-C5
|
JESD-609 Code |
e3
|
e3
|
Moisture Sensitivity Level |
1
|
1
|
Number of Elements |
1
|
1
|
Number of Terminals |
8
|
5
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
260
|
260
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
74 W
|
104 W
|
Pulsed Drain Current-Max (IDM) |
132 A
|
100 A
|
Qualification Status |
Not Qualified
|
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
Tin (Sn)
|
MATTE TIN
|
Terminal Form |
NO LEAD
|
C BEND
|
Terminal Position |
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
30
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
2
|
Factory Lead Time |
|
26 Weeks
|
|
|
|
Compare BSC360N15NS3G with alternatives
Compare SIR804DP-T1-GE3 with alternatives