BSC600N25NS3 G vs IPB600N25N3G feature comparison

BSC600N25NS3GATMA1 Infineon Technologies AG

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IPB600N25N3G Infineon Technologies AG

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Pbfree Code No
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-F5 SMALL OUTLINE, R-PSSO-G2
Pin Count 8 4
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
Factory Lead Time 18 Weeks
Samacsys Manufacturer Infineon Infineon
Avalanche Energy Rating (Eas) 210 mJ 210 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 250 V 250 V
Drain Current-Max (ID) 25 A 25 A
Drain-source On Resistance-Max 0.06 Ω 0.06 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-N8 R-PSSO-G2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 8 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 245
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 125 W 136 W
Pulsed Drain Current-Max (IDM) 100 A 100 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Tin (Sn) Tin (Sn)
Terminal Form NO LEAD GULL WING
Terminal Position DUAL SINGLE
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 2
Part Package Code D2PAK
JEDEC-95 Code TO-263AB

Compare BSC600N25NS3 G with alternatives

Compare IPB600N25N3G with alternatives