BSM150GB120DLC
vs
FF200R12KT3EHOSA1
feature comparison
| Part Life Cycle Code |
Transferred
|
Not Recommended
|
| Ihs Manufacturer |
EUPEC GMBH & CO KG
|
INFINEON TECHNOLOGIES AG
|
| Package Description |
FLANGE MOUNT, R-XUFM-X7
|
MODULE-7
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Collector Current-Max (IC) |
300 A
|
580 A
|
| Collector-Emitter Voltage-Max |
1200 V
|
1200 V
|
| Configuration |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
|
COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE
|
| Gate-Emitter Voltage-Max |
20 V
|
|
| JESD-30 Code |
R-XUFM-X7
|
R-XUFM-X7
|
| Number of Elements |
2
|
2
|
| Number of Terminals |
7
|
7
|
| Operating Temperature-Max |
125 °C
|
|
| Package Body Material |
UNSPECIFIED
|
UNSPECIFIED
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
1200 W
|
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
UNSPECIFIED
|
UNSPECIFIED
|
| Terminal Position |
UPPER
|
UPPER
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Turn-off Time-Nom (toff) |
650 ns
|
680 ns
|
| Turn-on Time-Nom (ton) |
190 ns
|
215 ns
|
| VCEsat-Max |
2.6 V
|
|
| Base Number Matches |
2
|
1
|
| Rohs Code |
|
Yes
|
| Factory Lead Time |
|
16 Weeks
|
| Samacsys Manufacturer |
|
Infineon
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Reference Standard |
|
UL RECOGNIZED
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
| Transistor Application |
|
POWER CONTROL
|
|
|
|
Compare FF200R12KT3EHOSA1 with alternatives